Multi-layer thin film structure and parallel processing method for fabricating same

ABSTRACT

A method and apparatus for releasing a workpiece from a substrate including providing a substrate which is transparent to a predetermined wavelength of electromagnetic radiation; forming, on the substrate, a separation layer which degrades in response to the predetermined radiation; providing the workpiece on the separation layer; and directing the predetermined radiation at the separation layer through the transparent substrate so as to degrade the separation layer and to separate the workpiece from the substrate.

FIELD OF THE INVENTION

The present invention relates to a multi-layer thin film structure, anda parallel processing method for fabricating same.

BACKGROUND OF THE INVENTION

In general, a multi-layer thin film interconnect structure is fabricateddirectly onto an electrically-good substrate, e.g., a ceramic orglass-ceramic substrate. Such a fabrication process has severaldrawbacks including WIP (Work In Progress) concerns because of theserial nature of the manufacturing sequence, and undesirableprocessing/handling of highly-valued glass-ceramic substrates. Further,if the fabricated multi-layer thin film structure is defective, then anotherwise electrically-good glass-ceramic substrate must be discarded orreworked.

Processing schemes have been proposed which allow for interconnect andother structures to be fabricated separately from the module on whichthey ultimately will be employed. The following are examples of suchprocessing schemes.

U.S. Pat. No. 4,743,568 to Wood discloses a method in which an oxidationlayer is formed on a silicon wafer. This is followed by the depositionof several metal and polyimide layers which are patterned to form adesired multilevel interconnect structure. This interconnect structureis subsequently separated from the silicon wafer by etching away theoxidation layer.

In U.S. Pat. No. 4,348,253 to Subbarao et al an adhesive layer is formedon a plating block, and a semiconductor wafer is provided on theadhesive layer. The adhesive layer is used for temporarily adhering thesubstrate wafer to the plating block. Specifically, after thesemiconductor wafer is subjected to a plating process, the adhesivelayer is dissolved in a solvent, and the plated semiconductor wafer isremoved from the plating block.

U.S. Pat. No. 4,774,194 to Hokuyou discloses a process for manufacturinga solar cell structure. The process includes forming a "removable layer"on a semiconductor substrate, and fabricating the solar cell structureon the removable layer. The removable layer is then etched away toseparate the fabricated solar cell structure from the semiconductorsubstrate.

U.S. Pat. No. 4,448,636 to Baber discloses a method in which a uniformmetal film is applied over a patterned resist layer. A short pulse ofradiant energy is then applied to the metal film, thereby causing theresist layer underneath the metal film to be locally heated. As aresult, outgassing occurs which breaks the mechanical bond between themetal film and the patterned resist. The metal film can then be removedfrom the resist.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a parallelprocessing scheme which allows a multi-layer thin film interconnectstructure and a ceramic substrate to be simultaneously fabricated.

It is another object of the invention to provide a multi-layer thin filmstructure which can be fully tested before being connected to asubstrate.

It is still another object of the invention to provide a multi-layerthin film structure which can be easily handled.

These and other objects of the invention are accomplished by providing asubstrate which is transparent to a predetermined wavelength ofelectromagnetic radiation; forming, on the substrate, a separation layerwhich degrades in response to the predetermined radiation but is stablethrough all thin film processing steps; providing a multi-layerinterconnect thin film stack or other workpiece on the separation layer;and directing the predetermined radiation at the separation layerthrough the transparent substrate so as to degrade the separation layerand to separate the interconnect thin film stack or workpiece from thesubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-5 are enlarged cross-sectional views of various processing stepsaccording to the invention.

PREFERRED EMODIMENT OF THE INVENTION

As shown in FIG. 1, initially, a transparent substrate or carrier 1 madefrom, for example, quartz is provided. The transparent substrate 1 has adiameter of, for example, about 82 mm, a thickness of, for example,about 3 mm and is polished on both surfaces thereof so as to be planar.Other diameters and thicknesses for the substrate 1 may be employed. Asanother example, the substrate 1 may be a 166 mm square substrate havinga thickness of about 6 mm. A polymer layer 2 is then spun on thetransparent substrate 1. The polymer layer 2 may be, for example,polyimide 5878 which is spun on transparent substrate 1 using A1100 asan adhesion layer to a thickness of between 5-15 μm. Polyimide 5878 andadhesive A1100 are well known in the art. Specifically, polyimide 5878is commercially sold by DuPont under the product designation 5878 orPMDA-ODA, and adhesive A1100 is a well known adhesive promotercommercially sold by Ohio Valley Specialty Chemical. As will bedescribed below, the polymer layer 2 serves as a "release layer" forreleasing a multi-layer interconnect thin film structure, fabricatedover polymer layer 2, from transparent substrate 1. It is important thatpolymer layer 2 be as planar as possible so as to minimize the stressesand strains on the fabricated interconnect structure during the releaseprocess. Such stresses and strain can cause damage to the interconnectstructure.

After the polymer layer 2 has been planarized, a metal layer 3 having athickness of between 10-1000 nm is deposited on polymer layer 2. Themetal layer 3, may be for example, Cr, Mo, or Nb. Other metals can alsobe used with the only limitation being that the metal not dissolve ingold or copper, whichever is the metal of choice for the interconnectwiring.

The metal layer 3 serves a dual purpose. First, metal layer 3 serves asa reflecting layer for preventing radiation passing through transparentsubstrate 1 from reaching the multi-layer interconnect structure on themetal layer 3 during a laser ablation process. Second, metal layer 3serves as an electrical ground plane for electrically testing of themulti-layer interconnect structure.

As shown in FIG. 2, a multi-layer interconnect structure 4 is fabricatedon the metal layer 3. The interconnect structure 4 has a thickness ofabout 75 microns, and includes an initial layer 4a containing gold orcopper contact studs which directly contact metal layer 3. The studs maybe formed by plating through a photo mask. The remaining layers of theinterconnect structure 4 are then fabricated over the initial layer 4ausing conventional wet and dry processes. A metal ring or frame 5 formedfrom, for example, aluminum or molybdenum, is then attached to the topsurface of the fabricated interconnect structure 4. As shown in FIG. 2,the metal ring or frame 5 covers only the periphery of this top surface,and serves as a support for the multi-layer interconnect structure 4after the interconnect structure 4 is released from transparentsubstrate 1 by a laser ablation technique which will now be described.

As shown in FIG. 3, ultraviolet light 10 from a scanning laser (notshown) is applied to the polymer layer 2 through the transparentsubstrate 1 in order to ablate the polymer layer 2. As discussed above,the metal layer 3 serves as a reflecting layer to prevent theultraviolet light from reaching the interconnect structure 4.

Laser ablation of a polymer layer is known in the art, and is discussedin, for example, IBM Technical Disclosure Bulletin, Volume 28, No. 5,October 1985, by Donelon et al. As a result of the laser ablation,monomer fragments, i.e., ejected material gas, becomes trapped betweenthe transparent substrate 1 and the reflecting metal layer 3, therebyforming voids 15 in the polymer layer 2, as shown in FIG. 3. These voidsdegrade the polymer layer 2, thereby allowing transparent substrate 1 tobe separated or released from the rest of the structure.

For the laser ablation technique discussed above, two different laserswere successfully used. The first was a KrF laser operating at 248 nm.With this laser, single pulses with energies between 100 mJ/cm² and 120mJ/cm² worked well. The second laser used was a XeCl laser operating at308 nm. With this laser, a single pulse with an energy of about 100mJ/cm² was effective. For both lasers, the transparent substrate 1 couldnot be released through the polymer layer 2 if the energies used werebelow 40 mJ/cm². In fact, with the KrF laser even a 100 Hz beam at 10mJ/cm² did not work indicating that heat was not the mechanism causingrelease. Specifically, the 100 Hz beam applies the same heat into thepolymer layer 2 in 100 msec as does the single 100 mJ energy pulse whichworked well. This data is consistent with polymer ablation data whichindicates that the beam energy should exceed about 50 mJ/cm² in orderfor ablation to occur.

After the interconnect structure 4 has been released from the substrate1, it is supported by the metal ring/frame 5. At this point, thestructure 4 can be applied to an electrically-good glass-ceramicsubstrate. However, the interconnect structure is first tested. As willnow be described, most of this testing can be conducted while theinterconnect structure 4 is still connected to the transparentsubstrate, whereas some of the testing must be conducted after theinterconnect structure 4 has been separated from the transparentsubstrate 1.

As shown in FIG. 4, there are two different types of conducting paths ina multi-layer interconnect structure. The first type, indicated by thereference numeral 20, is repair-related wiring or inter-chip wiringwhich starts and terminates on the top surface of the multi-layerinterconnect structure 4. The second type of conducting path, indicatedby the reference numeral 30, is power vias or interchip wiring whichgoes through the interconnect structure 4.

The first type of conducting path 20 can be completely tested for bothshorts and opens from the top surface of the interconnect structure 4while structure 4 is connected to the transparent substrate 1 throughmetal layer 3 and polymer layer 2.

However, during the time that interconnect structure 4 is connected tosubstrate 1, the second type of conducting path 30 can only be tested bymaking contact to the metal layer 3. As such, only testing for opens canbe conducted. Once the interconnect structure 4 is released fromsubstrate 1 and supported by metal ring or frame 5, the metal layer 3 isetched revealing the gold or copper studs in initial layer 4a. Once thestuds are revealed, conducting path 30 can be tested for shorts.

After a successful test of the multilayer interconnect structure 4, thestructure can be joined to an electrically-good glass-ceramic substrate.FIG. 5 shows the completed product, i.e., interconnect structure 4joined to an electrically-good glass-ceramic substrate 40, before themetal ring/frame 5 has been removed.

A number of known polymer/polymer and polymer/metal adhesion techniquescan be used to achieve complete contact between the multi-layerinterconnect structure 4 and the substrate 40. For example, theinterconnect structure 4 can be bonded to substrate 40 using Au-Authermo-compression bonding at 375° C. under pressure of 300 psi.

A processing scheme has been described wherein a multi-layerinterconnect structure is fabricated and tested separately from theglass-ceramic substrate. This approach can greatly enhance the yield ofthe completed module since the interconnect structure can be testedbefore being joined to the glass-ceramic substrate. In addition, sincethe multi-layer interconnect structure and the glass-ceramic substrateare manufactured independently of each other, the WIP concerns areminimal. As an added advantage, the glass-ceramic substrate is notsubjected to any thin film processing steps which may be as many asseveral hundreds.

It will be apparent to those skilled in the art that modifications andvariations may be introduced in practicing the present invention. Forexample, instead of using the metal layer 3, the polymer layer 2 may bedoped with a dopant which absorbs laser energy. In this embodiment ofthe invention, since most of the laser energy will be absorbed withinthe doped layer, there is no need for the reflecting metal layer 3.However, when using the doped polymer layer described above instead ofthe polymer and metal layers 2 and 3, respectively, testing of thesecond type of wiring 30 cannot be achieved. Testing is however possibleby placing the workpiece, after release, on a conducting table andmeasuring for opens. In fact, if the release layer 2 is thicker than5μm, no layer 3 is necessary because the release damage is limited toless than 1μm.

What is claimed is:
 1. A structure for receiving electromagneticradiation having a wavelength and an energy, the structure comprising:asubstrate which is transparent to the wavelength of the electromagneticradiation; a separation layer disposed on said substrate, saidseparation layer degrading in response to the energy of theelectromagnetic radiation; and a multi-layer interconnect thin filmstack disposed on said separation layer.
 2. The structure as defined inclaim 1, wherein said separation layer is a polymer.
 3. The structure asdefined in claim 2, wherein said polymer is polyimide.
 4. The structureas defined in claim 1, further comprising a reflecting layer disposedbetween said separation layer and said stack, said reflecting layerreflecting said radiation.
 5. The structure as defined in claim 4,wherein said reflecting layer is a metal layer.
 6. A structure forreceiving electromagnetic radiation having a wavelength and an energy,the structure comprising:a substrate which is transparent to thewavelength of the electromagnetic radiation; a separation layer disposedon said substrate, said separation layer degrading in response to theenergy of the electromagnetic radiation; a multi-layer interconnect thinfilm stack disposed on said separation layer; a metal reflecting layerdisposed between said separation layer and said stack, said reflectinglayer reflecting said radiation; and a ring attached to a top surface ofsaid stack.
 7. The structure as defined in claim 6, wherein said ring ismetal.